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| 2.5v drive nch mosfet RK7002BM ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high speed switing. 2) small package(sst3). 3) low voltage drive(2.5v drive). ? application switching ? packaging specifications ? inner circuit package taping code t116 basic ordering unit (pieces) 3000 RK7002BM ? ? absolute maximum ratings (ta = 25 ?c) symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 250 ma pulsed i dp ? 1a continuous i s 150 ma pulsed i sp 1a total power dissipation p d 0.2 w channel temperature tch 150 ?c range of storage temperature tstg ? 55 to +150 ?c *1 pw ? 10? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 625 ?c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter *2 *1 *1 * *2 *1 *1 abbreviated symbol : rku sst3 RK7002BM ? electrical characteristics (ta = 25 qc) symbol min. typ. max. unit gate-source leakage i gss -- r 10 p av gs = r 20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 p av ds =60v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.3 v v ds =10v, i d =1ma -1.72.4 i d =250ma, v gs =10v -2.13.0 i d =250ma, v gs =4.5v -2.33.2 i d =250ma, v gs =4.0v - 3.0 12.0 i d =10ma, v gs =2.5v forward transfer admittance l y fs l 0.25 - - s i d =250ma, v ds =10v input capacitance c iss -15-pfv ds =25v output capacitance c oss -4.5-pfv gs =0v reverse transfer capacitance c rss 2 - pf f=1mhz turn-on delay time t d(on) -3.5-nsi d =100ma, v dd 30v rise time t r -5-nsv gs =10v turn-off delay time t d(off) -18-nsr l =300 : fall time t f -28-nsr g =10 : *pulsed ? body diode characteristics (source-drain) (ta = 25 qc) symbol min. typ. max. unit forward voltage v sd --1.2vi s =250ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) : * * * * * * * * * * * * * * * 2/5 2014.01 - rev.b www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RK7002BM ? electrical characteristics curves 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ?c ta=75 ?c ta=25 ?c ta= -25 ?c v gs = 4.5v pulsed 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ?c ta=75 ?c ta=25 ?c ta= -25 ?c v gs = 10v pulsed 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ?c ta=75 ?c ta=25 ?c ta= -25 ?c v gs = 2.5v pulsed 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ?c ta=75 ?c ta=25 ?c ta= -25 ?c v gs = 4.0v pulsed 0.01 0.1 1 0.001 0.01 0.1 1 ta= -25 ?c ta=25 ?c ta=75 ?c ta=125 ?c v ds = 10v pulsed fig.5 static drain-source on-state resistance vs. drain current( ) fig.6 static drain-source on-state resistance vs. drain current( ) fig.7 static drain-source on-state resistance vs. drain current( ) fig.9 forward transfer admittance vs. drain current drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] fig.8 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v ta= 25 ?c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain-source voltage : v ds [v] 0 0.1 0.2 0.3 0.4 0.5 0246810 v gs = 2.5v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v ta= 25 ?c pulsed fig.2 typical output characteristics( ) drain-source voltage : v ds [v] drain current : i d [a] 0.0001 0.001 0.01 0.1 1 0123 ta=125 ?c ta=75 ?c ta=25 ?c ta= -25 ?c v ds = 10v pulsed fig.3 typical transfer characteristics drain current : i d [a] gate-source voltage : v gs [v] 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 2.5v v gs = 4.0v v gs = 4.5v v gs = 10v ta= 25 ?c pulsed fig.4 static drain-source on-state resistance vs. drain current( ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ? ] 3/5 2014.01 - rev.b www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RK7002BM 0 2 4 6 8 02.557.510 i d = 0.25a i d = 0.01a 1 10 100 0.01 0.1 1 10 100 1 10 100 1000 0.01 0.1 1 t f 0.001 0.01 0.1 1 00.511.5 ta=125 ?c ta=75 ?c ta=25 ?c ta= -25 ?c fig.10 reverse drain current vs. sourse-drain voltage fig.11 static drain-source on-state resistance vs. gate source voltage fig.13 typical capacitance vs. drain-source voltage fig.12 switching characteristics reverse drain current : is [a] source-drain voltage : v sd [v] static drain-source on-state resistance : r ds (on)[ ? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] drain-source voltage : v d s [v] capacitance : c [pf] v gs =0v ta=25 ?c f=1mhz t r ciss coss crss ta=25 ?c pulsed t d(off) t d(on) ta=25 ?c v dd = 30v v gs =10v r g =10 ? pulsed 4/5 2014.01 - rev.b www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet RK7002BM ? measurement circuits ? notice this product might cause chip aging and breakdown under the la rge electrified environment. please consider to design esd protection circuit. fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 5/5 2014.01 - rev.b www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet www.rohm.com ? 2014 rohm co., ltd. all rights reserved. notice ] ?? ???wgl o0x~?srwh?'sx!?b?\quk??b{ ???tgl^?om? o0x a ?w] op??pb{ ]?;tm`oxz m7 yw?7 {? ?c ] e{woqz ]? yxi^m{ ?x t ?~ ?t qw2 t ? ?ps??buz r ? . a ?x ?wa?p? ?~?^ ?b? d quk??b{ auz ? a ?u? ?~?^ ?`h ?pklo?z fw1t?? ??z pb ? sui\?sm ?o]? ;; +pw???a???z ? ? ?-z ?w-z ????z ??? ?? s w ? ? ? - ?s&m`?b{ ? qh]?;??; w ?? {u ??omsm ?z mts? y ?? x ?o?wpxk??d?{ ???tgl^?os??b ;s???fw :srw ?ctmv?`oxz ? a ?w a j $s ?^ ??mm? ?b??wpb{ `hum?`oz ?? ?-?^?? ?txz ? ? ~ e???`omhiv?b?os&mmh`?b{ ???tgl^?os??bu [ ?cxz a ?w e $ ?^s?| ;s??sr??`h?wpk?z ??hx tw ? $r?vfw wk???vbtmmo? $t??? $t?z fw?a?h xb;?? zb??wpxk??d?{ gu [ ?cw?;ti?`o u c \`h ?z ?x fw y ? ?o?wpxk??d?{ ? a ?xz ` $s ??;+ " 7;+z 0 ";+z ?;+zh ? a ?z ????y??;+sr s?|???t?`h; m?w?;?? $`om?b{ ???t l^?os??b a ?xz 1l ?-xs^?os??d?{ ? a ??<gw?os ?t?m ?t qua{^??;+ st?;^??mtxz ?? ?c]w w z ? z? ?oxi^m{ ~ ; + lz +z . ?sr z e ; ?;+z | ??;+z wb~w \ ?z ? 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